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| SHINDENGEN Super Fast Recovery Rectifiers Single D1FL20U 200V 1.1A FEATURES *oe Small OUTLINE DIMENSIONS Case : 1F Unit : mm SMT *oe Low noise *oe trr35ns APPLICATION *oe Switching power supply *oe DC/DC converter *oe Free Wheel *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 200 V Average Rectified Forward Current 50Hz sine wave, R-load, Ta=25*Z On alumina substrate IO 1.1 A 50Hz sine wave, R-load, Ta=25*Z On glass-epoxy substrate 0.84 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z A 20 *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Forward Voltage VF IF =1.1A, Pulse measurement Reverse Current IR V =V , Pulse measurement R RM Reverse Recovery Time trr IF =0.5A, R I =1A AEjl junction to lead Thermal Resistance AEja junction to ambient, On alumina substrate junction to ambient, On glass-epoxy substrate Ratings Unit Max.0.98 V Max.10 EA Max.35 ns Max.23 Max.108 *Z/W Max.157 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D1FL20U Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] 1 Tc=25C [TYP] Pulse measurement per diode 0.1 0 0.4 0.8 1.2 1.6 2 2.4 2.8 Forward Voltage VF [V] D1FL20U 1.6 Forward Power Dissipation D=0.8 DC 1.4 Forward Power Dissipation PF [W] 1.2 1 0.1 0.8 0.6 0.4 0.2 0 0.05 0.2 SIN 0.3 0.5 0 0.5 1 1.5 2 Average Rectified Forward Current IO [A] Tj = Tjmax 0 IO tp D=tp /T T D1FL20U 2 Derating Curve Average Rectified Forward Current IO [A] DC 1.5 0.5 SIN 1 0.3 0.2 0.1 0.5 0.05 D=0.8 Alumina substrate Soldering land 2mm Conductor layer 20m Substrate thickness 0.64mm 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = VRM IO 0 0 VR tp D=tp /T T D1FL20U 1.6 Derating Curve Average Rectified Forward Current IO [A] 1.4 1.2 1 0.8 0.6 0.4 0.05 0.2 0 DC D=0.8 Glass-epoxy substrate Soldering land 2mm Conductor layer 35m 0.5 SIN 0.3 0.2 0.1 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = VRM IO 0 0 VR tp D=tp /T T D1FL20U 35 Peak Surge Forward Capability IFSM 10ms 10ms 30 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 25 20 15 10 5 0 1 2 5 10 20 50 100 Number of Cycles [cycles] D1FL20U Junction Capacitance 100 f=1MHz Tl=25C TYP per diode Junction Capacitance Cj [pF] 10 1 10 100 Reverse Voltage VR [V] |
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